Drain
characteristic of FET
The curve
between drain current ID and drain source voltage VDS of
a FET at constant gate source voltage VGS is known as drain or
output characteristics of FET. The below fig shows the circuit for determining
the output characteristics of FET. Keeping VGS fixed at some value,
the drain – source voltage is changed in steps. Corresponding to each value of
VDS the drain current ID is noted. A plot of these value
gives the output characteristics of FET. Repeating similar procedure, output
characteristics at other gate _ source voltage can be drawn. The fig shows a
family of output characteristics understand the nature of the drain
characteristics. Let us consider the characteristics for VGS = 0,
the channel between the gate junctions is fully open. On application of small
voltage of VDS, the n-type bar simply acts as a semiconductor and
the drain current ID increase linearly with VDS. As the
voltage VDS is progressively increased a value of VDS is
reached at which the channel is pinched off. With further increases of VDS,
the current ID
begins to level off and approaches a constant value. The value of VDS
at which the channel is pinched off i.e. all the free charges from the channel
are removed, is called pinch off voltage VP. Further
increases of VDS causes the avalanche breakdown.
Now let us
assume that the gate is supplied with negative voltage. In this case the junction
is reverse biased. Hence the conducting portion of the channel is reduced. The
resulting drain characteristics are similar to the one for VGS = 0,
except that the pinch off occurs for smaller values of VDS. The
breakdown also occurs at lower VDS. If the gate voltage is increased
further negatively biasing the gate junction, we obtain characteristics similar
to the one obtained above. All such characteristics will show a reduction in
pinch off voltage smaller where the drain current is proportional to the VDS
and lower breakdown voltages.
(a) Circuit for Determining the Drain Charecteristics
(b) Drain Charecteristics
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